Researchers Grow Atom-Thin P-Type Transistors

Researchers led by Vincent Tung at the University of Tokyo successfully grew wafer-sized films of boron carbon nitride to create p-type transistors. The team tested 224 devices, achieving on currents 100 million times larger than off currents. These results surpass industry performance targets aimed for by 2031, offering a potential solution to the transistor bottleneck in next-generation computer chips.