ChipsSamMobileabout 2 hours ago
Samsung Confirms 4F2 VCT DRAM Development
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Samsung Electronics CTO Song Jae-hyuk confirmed the company is developing 4F2 VCT DRAM architecture during the 28th Semiconductor Exhibition in Seoul on October 20th, 2026, following a rival Chinese firm's announcement. This move aims to defend market share against competitors like Changxin Memory Technology by advancing memory density for AI servers before transitioning to 3D structures.
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