ChipsPandailyabout 2 hours ago
HUST Team Cuts Contact Resistance 94%
1 min read
A team led by Huazhong University of Science and Technology reported high-performance p-type transistors using oxygen doping to reduce contact resistance by 94%. Published in Nature Communications on October 1, the study addresses crystal defects and high resistance in 2D semiconductors using a single atomic layer of tungsten diselenide.
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