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A KAIST-led team successfully fabricated tunable gate electrodes using metal-organic frameworks for semiconductors. The study, published in Advanced Materials in 2026, tested the electrodes on three materials including 23 IGZO transistors on a single substrate. Devices maintained stable performance after 400 consecutive gate-voltage cycles, proving the material works effectively for scalable electronics.
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Summary by ByteBrief
Researchers Create In-Situ Transistor in Tungsten Monolayer