Micron Plans 400-Layer NAND by 2027

Micron revealed plans to launch G11 3D NAND in the second half of 2027, doubling bit density to 42 Gb/mm2 and increasing I/O speeds by 50% to 5,400 MT/s. The technology uses wafer-on-wafer bonding and reduces energy consumption by more than 25% compared to the current G9 generation.