ChipsScienceDaily CSabout 9 hours ago
A 0.42-nanometer breakthrough could push transistors beyond silicon
1 min read
Researchers at National Yang Ming Chiao Tung University and TSMC Corporate Research engineered an atomic interface for MoS2 transistors. An ultrathin aluminum oxide layer, just 0.42 nanometers thick, enables thinner dielectrics and stronger electrostatic control. The work appears in Nature Electronics.
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