TechTechSpotabout 2 hours ago
Samsung unveils 400-layer V10 BV-NAND chip
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Samsung Electronics unveiled its V10 BV-NAND storage chip at the Future of Memory and Storage 2026 expo in Santa Clara, California. The 10th-generation vertical NAND uses new wafer-bonding technology to stack over 400 layers, delivering roughly 58% higher memory density than V9 chips for AI data centers.
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