Team Builds Zero-Gate-Bias Phototransistor

A team led by Professor Meng Guodong at Xi'an Jiaotong University built a phototransistor from a two-dimensional semiconductor. This device reaches high sensitivity and fast response without any applied gate voltage. The work was published as a front-cover paper in Advanced Optical Materials under the title Plasmon-Enhanced Photodetection in Ferroelectric-Tunable Two-Dimensional Phototransistor. PhD student She Junyi is the first author.