2D transistor breakthrough at 50nm pitch

Imec, ASML, and TSMC integrated n-type and p-type 2D-material transistors on a single 300mm wafer at a 50nm contacted poly pitch, the tightest demonstrated for complementary 2D devices. 94% of transistors switched correctly with an on/off current ratio above 100,000. The work narrows the gap on p-type 2D CMOS performance.