ChipsTom's Hardwareabout 1 hour ago
Kyoto transistor survives 600C with standard fab process
3 min read
Kyoto University built a silicon carbide transistor operating at 600°C using standard ion implantation. A bottom-gate design and double-well isolation cut threshold voltage drift to under 0.1V at 400°C, down from over 2V. Work by Kaneko, Shibata, and Kimoto appears in APL Electronic Devices.
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