AITom's Hardwareabout 4 hours ago
HBM turned sideways to cool AI memory stacks
7 min read
Korean and Japanese researchers presented V-Die and MOSAIC designs at the 2026 VLSI Symposium that stand DRAM dies on edge instead of stacking them flat. The approach aims to increase HBM bandwidth and density while reducing heat buildup in tall memory stacks powering AI accelerators.
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